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DMN3112SSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
? 20
Units
V
V
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
6
4.5
24
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J, T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
??
?
?
?
??
?
?
800
? 80
? 800
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ? 20V, V DS = 0V
V GS = ? 25V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 7)
V GS(th)
R DS(ON)
g fs
V SD
1
?
?
0.5
?
43
83
2.8
0.8
2.2
57
112
?
1.2
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 5.8A
V GS = 4.5V, I D = 3.7A
V DS = 10V, I D = 3.7A
V GS = 0V, I S = 2.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
268
73
50
?
?
?
pF
pF
pF
V DS = 15V, V GS = 0V
f = 1.0MHz
Notes:
5. Device mounted on 2 oz copper pad layout with R ? JA = 50°C/W.
6. Pulse width ? 10 μ S, Duty Cycle ? 1%.
7. Short duration pulse test used to minimize self-heating effect.
10
10
8
6
4
V GS = 10V
V GS = 4.5V
V GS = 4.0V
V GS = 3.5V
8
6
4
2
V GS = 3.0V
2
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5
V GS = 2.5V
1 1.5 2 2.5 3 3.5 4 4.5
V DS , DRAIN-SOURCE VOLTAGE (V)
5
0
1
2 3 4
V GS , GATE-SOURCE VOLTAGE (V)
5
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristic
DMN3112SSS
Document number: DS31582 Rev. 2 - 2
2 of 5
www.diodes.com
October 2013
? Diodes Incorporated
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